multi function gate bipolar transistor

Model Number:AIGB15N65H5

... topologies, serving as a plug-and-play replacement for previous generation IGBTs. With a 650V breakdown voltage, low gate charge, and a maximum junction temperature of 175C, this dynamically stress-tested and AEC-Q101 qualified component is ideal for

Model Number:IXXX160N65C4-HXY

... coefficient in VCESAT, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C and RoHS compliance, this device is suitable for demanding industrial uses....

Model Number:IGW50N65F5-HXY

...IGW50N65F5 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage...

Model Number:S8050

...bipolar junction transistor (BJT) designed for general-purpose applications. It is complementary to the S8550 transistor, offering a collector current of up to 0.5A. This transistor is suitable for various electronic circuits requiring amplification or switching functions.Product Attributes Brand: S8050 (Marking: J3Y) Packaging: SOT-23 Plastic-Encapsulate Transistors...

Model Number:JTDS8050

...Transistor (NPN) The S8050 is an NPN bipolar junction transistor designed for general-purpose applications. It is complementary to the S8550 transistor, offering similar performance characteristics. This transistor is suitable for various electronic circuits requiring amplification or switching functions...

Model Number:S8550

...bipolar junction transistor (BJT) designed for general-purpose applications. It is complementary to the S8050 transistor. Key features include a maximum collector current of 0.5A and a collector power dissipation of 0.3W. This transistor is suitable for various electronic circuits requiring amplification or switching functions. Product Attributes Type: Transistor...

Model Number:CA3140AMZ

Place of Origin:original factory

...voltage PMOS transistors with high voltage bipolar transistors on a single monolithic chip. The CA3140A and CA3140 BiMOS operational amplifiers feature gate protected MOSFET (PMOS) transistors in the input circuit to provide very high input impedance, very

Model Number:UMH3NFHATN

Product Overview The UMH3N FHA is a general-purpose dual digital transistor, AEC-Q101 qualified, housed in a SOT-363 (UMT6) package. It integrates two independent DTC143T chips, offering the functionality of two transistors in a single compact package...

Brand Name:GE

Model Number:DS200IIBDG1AEA

Place of Origin:US

...Gate Driver Board Product Details: The GE DS200IIBDG1AEA is an IGBT (Insulated Gate Bipolar Transistor) Driver Board designed for drive control systems, specifically GE’s Mark V Series. As a revised version of the parent DS200IIBDG1 board (with three significant product updates), its core role is to deliver precise control signals—typically pulse-to IGBT gate...

Brand Name:GE

Model Number:DS200IIBDG1ADA

Place of Origin:US

...Gate Driver Board Product Details: The GE DS200IIBDG1ADA is an IGBT (Insulated Gate Bipolar Transistor) Driver Board designed for drive control systems, specifically GE’s Mark V Series. As a revised version of the parent DS200IIBDG1 board (with three significant product updates), its core role is to deliver precise control signals—typically pulse-to IGBT gate...

Model Number:S8050

Product Overview The S8050 is an NPN bipolar junction transistor designed for general-purpose applications. It offers a complementary function to the S8550 transistor and is suitable for various electronic circuits requiring amplification or switching ...

Model Number:2N5401

Product Overview The 2N5401 is a PNP bipolar junction transistor (BJT) designed for medium power amplification and switching applications. It is complementary to the MMBT5551, offering ideal performance characteristics for these tasks.Product Attributes ...

Model Number:SS8550

...bipolar junction transistor designed for general-purpose applications. It features high collector current capability and serves as a complementary component to the SS8050 transistor. This device is suitable for various electronic circuits requiring amplification or switching functions...

Model Number:C1815

... MHz. Key electrical characteristics include a collector-base breakdown voltage of 60V and a collector-emitter breakdown voltage of 50V. This transistor is suitable for various electronic circuits requiring amplification or switching functions.

Model Number:RGTH00TS65GC13-HXY

...RGTH00TS65GC13 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation ...

Model Number:FGW75N65WE-HXY

...temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters....

Model Number:APT50GF120B2RG-HXY

...APT50GF120B2RG is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation ...

Model Number:IRGP4790-EPBF-HXY

... coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters....

Model Number:FGH40T65SQD-F155-HXY

... coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-chargers, and solar string inverters....

Model Number:APT70GR65B-HXY

... Overview The APT70GR65B is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation ...