multi function gate bipolar transistor

Place of Origin:China

Brand Name:Centuryfair

Model Number:SJSDZG-2

Digital Magnetic Card Stainless Steel Tripod Turnstile , Subway Entrance Barrier Description: SJSDZG-2 is widely used in airport, musem, bus station, supermarket, park., etc. It is able to integrate with barcode, magnetic card, IC, ID card to excute access...

Brand Name:onsemi

Model Number:SGL160N60UFD

Place of Origin:Original Factory

IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UFD series is designed for applications...

Brand Name:CANYI

Model Number:3N80

Place of Origin:Guangdong, China

...good heat dissipation Ultra low gate charge Low reverse transfer capacitance Fast switching capability Avalanche energy specified General description of insulated gate bipolar transistor The 3N80 provide excellent RDS(ON)low gate charge and operation with

Brand Name:CANYI

Model Number:3N80

Place of Origin:Guangdong, China

... package for good heat dissipation Ultra low gate charge Low reverse transfer capacitance Fast switching capability Avalanche energy specified General description of insulated gate bipolar transistor The 3N80 provide excellent RDS(ON)low gate charge and

Brand Name:Infineon

Model Number:IRG4IBC30S

Discover the Pros and Cons of IRG4IBC30S Before Investing Your Money Is IRG4IBC30S the Right Choice for Your Electronics Needs? If you're looking for a powerful Insulated Gate Bipolar Transistor (IGBT) for your electronic projects, you may have heard...

Brand Name:ON

Model Number:FGH60N60SFDTU

Place of Origin:Original

...IGBT Transistors Technology: Si Package / Case: TO-247AB-3 Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.3 V Maximum Gate Emitter Voltage: - 20 V, + 20 V Continuous Collector Current at 25 C: 120 A

Brand Name:Infineon

Model Number:IKW25N120T2

Place of Origin:Original Factory

... discrete with anti-parallel diode in TO-247 package Infineon 1200V Gen8 IGBTs feature trench gate field stop technology delivered in industry standard TO-247 packages to provide best-in-class performance for industrial and energy-saving ...

Brand Name:Infineon

Model Number:IKW30N60H3

Place of Origin:Original

...Specifications Product Attribute Attribute Value Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 1.95 V Maximum Gate Emitter Voltage: - 20 V, + 20 V

Brand Name:ST

Model Number:STGW80V60DF

Place of Origin:Original

...Gate Bipolar Transistor Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters Specifications Product Category: IGBT Transistors Package / Case: TO-247-3 Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 1.85 V Maximum Gate...

Brand Name:ST

Model Number:STGB10NC60KDT4

Place of Origin:Original

...Gate Bipolar Transistor Applications High frequency motor controls SMPS and PFC in both hard switch and resonant topologies Motor drives Specifications Product Attribute Attribute Value Product Category: IGBT Transistors Technology: Si Package / Case: D2PAK-3 Mounting Style: SMD/SMT Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.2 V Maximum Gate

Brand Name:Infineon

Model Number:IRGP4063DPBF

Place of Origin:Original

...Gate Bipolar Transistor Applications •uninterruptible power supplies •welding converters •converters with high switching frequency Specifications Product Attribute Attribute Value Package / Case: TO-247-3 Mounting Style: Through Hole Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 2.05 V Maximum Gate...

Model Number:BC807-40

...Bipolar Transistor The BC807 is a PNP bipolar transistor designed for surface mount applications. It offers complementary functionality to the BC817, featuring high collector current and high current gain. Constructed with an epitaxial planar die, this device is suitable for various electronic circuits requiring a robust and efficient PNP transistor...

Model Number:FGH50T65SQD-F155-HXY

... Gate Bipolar Transistor The FGH50T65SQD-F155 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate...

Brand Name:onsemi

Model Number:NJVMJD31CT4G

Place of Origin:CN

NJVMJD31CT4G Bipolar Transistors - BJT 3.0 A, 100 V NPN Bipolar Power Transistor Features Lead Formed for Surface Mount Applications in Plastic Sleeves Straight Lead Version in Plastic Sleeves (“1" Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4" ...

Model Number:PIMN31

Place of Origin:Malaysia

...gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type

Brand Name:IXYS

Model Number:IXGA20N250HV

...Mount TO-263HV IXYS IXGA20N250HV High Voltage IGBT IXYS IXGA20N250HV High Voltage IGBT (Insulated Gate Bipolar Transistor) provides a square Reverse Bias Safe Operating Area (RBSOA) and 10µs short circuit withstanding capability. The IXGA20N250HV features...

Brand Name:IXYS

Model Number:IXYK110N120A4

... thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The

Model Number:ZXTP25040DFHTA

Product Overview The ZXTP25040DFH is a 40V PNP medium power transistor in a SOT23 package. It offers high power dissipation, high peak current, and low saturation voltage, making it suitable for applications such as MOSFET and IGBT gate driving, DC-DC ...

Model Number:FMMT591ATA

Product Overview The FMMT591A is a 40V PNP medium power, high-performance transistor in a SOT23 package. It offers a high continuous collector current of -1A and a peak pulse current of -2A, with a low saturation voltage of less than -500mV at -1A and an ...