transistor specification

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications Description of RD06HVF1 RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp...

Brand Name:Silicon Labs

Model Number:SI4010-C2-GSR

Place of Origin:Multi-origin

SI4010-C2-GSR RF Power Transistors Product Description: The SI4010-C2-GSR is a high-performance RF power transistor specifically designed for use in narrow band, high power applications such as cellular, PCS, and 3G infrastructure. The device is ...

Model Number:TIP105

...Overview This is a PNP Silicon Transistor, specifically a Darlington transistor with an integrated damping diode. It is designed for high-gain circuits and offers a high collector current capability. Key specifications include a collector-emitter voltage...

Brand Name:MITSUBISHI

Model Number:RD06HVF1

Place of Origin:Original

RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet DESCRIPTION RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz ...

Brand Name:ST

Model Number:STGW80H65DFB

Place of Origin:Original

...Gate Bipolar Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors Technology: Si...

Brand Name:original

Model Number:WSF28N06

Place of Origin:Guangdong, China

... voltage rating of 60 volts and current rating of 28 amperes. It is commonly used in power supply circuits and other switching applications. Specification item value Model Number WSF28N06 Type Bipolar Transistor Place of Origin China Guangdong D/C

Brand Name:Original Factory

Model Number:IXBX50N360HV

Place of Origin:CN

... MOS Transistor. Specification Of IXBX50N360HV Part Number IXBX50N360HV Voltage - Collector Emitter Breakdown (Max) 3600 V Current - Collector (Ic) (Max) 125 A Current - ...

Country/Region:china

...transistors is very large. It is a solid semiconductor device with multiple functions such as detection, rectification, amplification, switching, voltage regulation, and signal modulation.Pingshang Technology´s main SMD transistor series, the main categories are: SMD diodes, SMD transistors, field effect transistors and MOS transistors.Free samples, provided for life!The transistor specifications...

Brand Name:Original

Model Number:BFT92

Place of Origin:Original

...of the leading distributors of electronic products, we carry many electronic components from the world's top manufacturers. For more information on BFT92 detailed specifications, quotations, lead times, payment terms and more, please do not hesitate to

Brand Name:ROHM

Model Number:EMD3T2R

...transistors) Specifications: Datasheets EMD3, UMD3N, IMD3A Product Photos EMT6_EMT6 PKg Catalog Drawings EMT-6 Package Top Standard Package 8,000 Category Discrete Semiconductor Products Family Transistors (BJT) - Arrays, Pre-Biased Series - Packaging Tape & Reel (TR) Transistor...

Brand Name:Hua Xuan Yang

Model Number:AP10H06S

Place of Origin:ShenZhen China

AP10H06S N Channel Mos Field Effect Transistor High Frequency N Channel Mos Field Effect Transistor types Within the overall arena of power MOSFETs, there are a number of specific technologies that have been developed and addressed by different ...

Brand Name:Diodes

Model Number:DMT6009LSS-13

Place of Origin:CHINA

... MOSFET N Channel 60V 10.8A Transistors FETS MOSFET N-CH 60V 10.8A 8SO T&R 2 Discrete Semiconductor DMT6009LSS-13 Specification : Part number DMT6009LSS-13 Category Discrete Semiconductor Products 　 Transistors - FETs, MOSFETs - Single Mfr Diodes ...

Place of Origin:Original

NPT2010 Specifications Part Status Active Transistor Type HEMT Frequency 0Hz ~ 2.2GHz Gain 15dB Voltage - Test 48V Current Rating - Noise Figure - Current - ...

Brand Name:Infineon

Model Number:IRLML6402TRPBF

Place of Origin:Shenzhen,China

... leading distributors of electronic products, we carry many electronic components from the world's top manufacturers. For more information on IRLML6402TRPBF detailed specifications, quotations, lead times, payment terms and more, please do not hesitate to

Brand Name:NMD

Model Number:A007665 A004756

Place of Origin:China

... Glory. The NS200 Photo Transistor Infrared Sensor is a specific component used within this equipment. The NS200 Photo Transistor Infrared Sensor is an optical sensing device that utilizes infrared (IR) light to detect the presence or absence of objects,

Brand Name:RENESAS

Model Number:2SD1899

Place of Origin:JAPAN

...Transistors Silicon NPN PowerTransistor DESCRIPTION ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High transition frequency applications Specifications...

Brand Name:NEXPERIA

Model Number:NX7002AK

Place of Origin:CHINA

NX7002AK NEXPERIA N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted D Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Active SVHC Yes Automotive No PPAP No Product Category ...

Brand Name:RKENS

Model Number:RS-902A

Place of Origin:China

...Transistor/Hall Sensor Lead Cutting Machine Intro: RS-902A is a motorized radial lead cutting machine for components on tape and reel. It can work for 12.7mm or 15mm tape hole pitch. The lead cutting length is adjustable. It can cut leads shortest to 2.8mm. Specification...

Brand Name:Original Factory

Model Number:IMBG65R039M1HXTMA1

Place of Origin:China

Transistor N Channel MOS Transistor IMBG65R039M1HXTMA1 New Parts MOSFET Transistors Product Description Commutation robust fast body diode Reduced system cost and complexity Higher robustness and system reliability Product Specifications Part Number ...

Brand Name:INNOTION

Model Number:YP601238T

Place of Origin:Jiangsu, China

...Transistor YP601238T with High Efficiency Gain and Wide Bandwidth DC to 7.2GHz Product Description Innotion’s YP601238T is a 7-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 7200MHz. The transistor is supplied in a plastic SOT-89 package. Technical Specifications