4H Silicon Carbide Substrate for Power Electronics, RF Devices & UV Optoelectronics

4H Silicon Carbide Substrate for Power Electronics, RF Devices & UV Optoelectronics

Product Overview

The 4H-SiC Substrate is a high-purity, single-crystal silicon carbide material designed for advanced power electronics, RF devices, and optoelectronic applications. Produced through the PVT method and finished with precision CMP polishing, each substrate features ultra-low defect density, excellent thermal conductivity, and stable electrical characteristics.

Its compact size is ideal for R&D, device prototyping, laboratory testing, and small-scale production.

Key Features

✔ Prime-Grade Crystal Quality

• Polytype: 4H-SiC

• Conductivity: N-type doped

• Micropipe Density (MPD): <1 cm⁻²

• Dislocation Density: <10⁴ cm⁻²

✔ Ultra-Smooth Polished Surfaces

• Si-face (CMP): Ra ≤ 0.5 nm

• C-face (polished): Ra ≤ 1 nm

• Epitaxy-ready finish for high-quality epitaxial growth

✔ Stable Electrical Properties

• Resistivity: 0.01–0.1 Ω·cm

• Carrier concentration: 1×10¹⁸ – 5×10¹⁹ cm⁻³

• Ideal for high-voltage and high-frequency device structures

✔ Excellent Thermal Performance

• Thermal conductivity: 490 W/m·K

• Operating temperature capability: up to 600°C

• Low thermal expansion coefficient: 4.0×10⁻⁶ /K

✔ High Mechanical Strength

• Vickers hardness: 28–32 GPa

• Flexural strength: >400 MPa

• Long service life and excellent wear resistance

Technical Specifications

Available Customization

• Non-standard sizes: 5×5 mm, 5×10 mm, Ø2–8 inch round substrates

• Thickness: 100–500 μm or custom

• Orientation: 4°, 8°, or on-axis

• Surface finish: Single-side polish / double-side polish

• Doping: N-type, P-type, semi-insulating

• Backside metallization

Application Areas

1. Power Electronics

Ideal for SiC MOSFETs, SBDs, diodes, and high-voltage device prototyping.

2. RF & 5G Infrastructure

Used for RF power amplifiers (PA), switches, and millimeter-wave devices.

3. New Energy Vehicles

Supports EV inverter development, power module R&D, and wide-bandgap testing.

4. Aerospace & Defense

High-temperature and radiation-resistant electronic components.

5. Optoelectronics

UV LEDs, photodiodes, laser diodes, and GaN-on-SiC structures.

6. University & Laboratory R&D

Material research, epitaxy experiments, device fabrication.

FAQ

1. What is the main advantage of 4H-SiC compared with 6H-SiC?

4H-SiC offers higher electron mobility, lower on-resistance, and superior performance in high-power and high-frequency devices. It is the industry-preferred material for MOSFETs, diodes, and advanced power modules.

2. Do you provide conductive or semi-insulating SiC substrates?

Yes. We offer N-type conductive 4H-SiC for power electronics and semi-insulating 4H-SiC for RF, microwave, and UV detector applications. Doping level and resistivity can be customized.

3. Can the substrate be used directly for epitaxy?

Yes. Our epi-ready 4H-SiC substrates feature CMP-polished Si-face surfaces with low defect density, suitable for MOCVD, CVD, and HVPE epitaxial growth of GaN, AlN, and SiC layers.